A form of spin-momentum locking, similar to the strong linkage between electron spin and momentum in topological insulators, has been found in a cuprate superconductor. The results open a new chapter in the mystery of high-temperature superconductors, suggesting that new, unexplored interactions and mechanisms might be at play. Read more »
Electric-Field Switching of Topological Phase
Researchers have successfully switched a topological insulator on and off by applying an electrical field. The work represents a major advancement toward the creation of a functioning topological transistor that would allow devices to operate more efficiently at lower power than conventional electronics. Read more »
Pressure-driven band gap engineering in ion-conducting semiconductor silver orthophosphate
This work explores a novel method to tune the electronic band structures of active semiconductor photocatalysts to gain insight into structure–property relationships. Taking silver orthophosphate (Ag3PO4) as an example, a static pressure technique was applied to modulate the band gap and indirect–direct band character via altering its crystal structure and lattice parameters. Read more »
Memristor Collaboration between ALS and Hewlett Packard Labs Propels Theory to Application
The development of an idea into a commercial product can take decades, a timeframe that allows contributions from multiple generations of scientists and requires investment in basic research. Collaborative research between the ALS and Hewlett Packard Labs has advanced the memristor, a device that can store information using little to no power. Read more »
Self‐Assembly of Large‐Area 2D Polycrystalline Transition Metal Carbides for Hydrogen Electrocatalysis
Xining Zang et al. develop a self‐assembly process to synthesize 2D transition metal carbides (TMCs). The metal ions (Mo, Co, W) self‐organize within a gelatin template into a lamellar nanostructure. Subsequent carbonization at moderate temperatures in a reducing atmosphere yields ultrathin 2D‐TMC sheets with high conductivity and rich active sites ideal for the hydrogen evolution reaction. Read more »
Magnetic Skyrmions: Current‐Induced Skyrmion Generation through Morphological Thermal Transitions in Chiral Ferromagnetic Heterostructures
Magnetic skyrmions are particle‐like chiral twists of the magnetization that promise advances in spin‐based data storage and logic device applications. In this article, researchers examine current‐induced generation of skyrmions in heavy‐metal/ferromagnet multilayers and show that Joule heat pulses can drive topological transitions in magnetic textures and enable skyrmion creation on nanosecond timescales. Read more »
Tunable Ferromagnetism in a 2D Material at Room Temperature
Researchers combined soft x-ray spectroscopy and microscopy to demonstrate the tunable ferromagnetic characteristics of a two-dimensional layered material at room temperature. The results open up exciting opportunities for the use of such materials in low-power spintronics, high-density magnetic storage, and flexible electronics. Read more »
Ordered Magnetic Patterns in a Disordered Magnetic Material
Scientists have confirmed the presence of chirality, or handedness, in nanometers-thick samples of amorphous (noncrystalline) multilayer materials. The chirality—which potentially could be exploited to transmit and store data in a new way—was observed in the domain walls between neighboring regions of opposite spin. Read more »
A 2D Lattice of Molecular Qubits for Quantum Computing
Researchers developed a way to build a 2D lattice of molecular-spin qubits (quantum bits of information), with control over qubit orientation and localization. The work enables the integration of molecular quantum-information hardware into the scalable, robust, solid-state architectures needed for performing quantum computation. Read more »
Oxygen Vacancies Matter in the LaNiO3 Metal–Insulator Transition
Electronic structure measurements using x-ray absorption spectroscopy suggest that oxygen vacancies contribute to the metal–insulator transition in ultrathin films of LaNiO3. The results give scientists another “knob” to turn to tune this important transition, which could be useful for making advanced electronic devices. Read more »
- « Previous Page
- 1
- …
- 13
- 14
- 15
- 16
- 17
- …
- 25
- Next Page »