Researchers showed that a vertical voltage reverses the direction of horizontal polarization of a Bi₄Ti₃O₁₂ thin film. This coupled switching removes a key limit of conventional ferroelectrics and enables stable, low-voltage, high-density memory that could cut the energy use of electronics. Read more »
QERLIN Imaging RIXS Team Receives 2026 Klaus Halbach Award
The team was recognized for their pioneering instrumentation design, innovative optical engineering, and advanced detector integration at the QERLIN Imaging RIXS endstation. Read more »
Musahid Ahmed Receives 2026 David A. Shirley Award
Musahid Ahmed received the 2026 Shirley Award for building the ALS’s chemical dynamics beamline into a global model for studying how chemical reactions unfold and for mentoring the scientists who carried his ideas worldwide. Read more »
Strain Unlocks Unconventional Magnetism in Ruthenium Dioxide
Researchers saw signs of altermagnetism in thin, strained ruthenium dioxide, previously thought non-magnetic in bulk form. This finding revives the material as a candidate for spintronic devices that could be faster and more energy-efficient than today’s ferromagnet-based electronics. Read more »
Stacking Bits: Layer-Selective Skyrmions Point to 3D Memory
Using element-specific X-rays, researchers discovered skyrmions occupied only alternating layers in a synthetic antiferromagnet, not all layers as expected. The ability to control where and how skyrmion bits form within stacked layers offers a design strategy for 3D memory devices that store more data per volume. Read more »