Beamline 12.0.1
EUV Lithography Nanopatterning (MET/MET5)
- Endstation 12.0.1.2 - EUV resist fundamentals tool
- Endstation 12.0.1.4 - 0.5 NA EUV Micro-field Exposure Tool (MET5)
| Current status | Operational; restricted access |
|---|---|
| ALS-U Status | This beamline will temporarily close at the start of the ALS-U dark time and will resume operations after a commissioning period. For more information, see ALS-U Beamline Impacts and other ALS-U web pages. |
| Source | U8 |
| Minimum energy (eV) | 92 |
| Maximum energy (eV) | 92 |
| Research areas |
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| Technique category |
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| Flux/Brightness | up to 200 mJ/cm2/s |
| Resolving power | 8 nm (max imaging resolution) |
| Access modes |
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| Additional notes | ALS Beamline 12.0.1 has been an engine for EUV materials learning for 16 years. Testing 1500 new EUV material systems each year, the Microfield Exposure Tool and the Dose Calibration Tool are used by researchers around the world for early learning in key areas such as EUV resists, processing, and masks. |
| Primary contact(s) | Chris Anderson |
| Beamline website | https://met.lbl.gov |
Endstation 12.0.1.2
EUV resist fundamentals tool
| Status | Operational; limited access |
|---|---|
| Research areas |
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| Technique category |
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| Sample information | 4" Si wafers or 75mm x 75mm Si coupons |
| Primary contact(s) | Oleg Kostko Patrick Naulleau |
| Endstation phone number | 510-495-2120 |
Endstation 12.0.1.4
0.5 NA EUV Micro-field Exposure Tool (MET5)
| Status | Operational; limited access |
|---|---|
| Research areas |
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| Spot size | 1000 um x 150 um at the reticle |
| Field of view/spatial resolution | 200 um x 30 um field size @ wafer (5X demagnification). 8 nm imaging resolution |
| Sample information | 8" Si wafers |
| Primary contact(s) | Chris Anderson Patrick Naulleau |
| Endstation website | http://met.lbl.gov |
| Endstation phone number | 510-495-2120 |