A new measurement technique developed at the ALS is helping guide the semiconductor industry in next-generation nanopatterning techniques. NIST and IBM researchers collaborated on the technique, which allows scientists to evaluate the 3D buried features inside a film. The ALS is currently the only place in the world that has such capability.
The influence of molecular orientation on organic bulk heterojunction solar cells
Work done on ALS Beamlines 11.0.1.2, 7.3.3, and 5.3.2.2. reveals that preferential orientation of polymer chains with respect to the fullerene domain leads to a high photovoltaic performance. Read more »